![](/img/cover-not-exists.png)
Reduction of stacking faults in (110) and (112) GaN films by ELO techniques and benefit on GaN wells emission
Z. Bougrioua, M. Laügt, P. Vennéguès, I. Cestier, T. Gühne, E. Frayssinet, P. Gibart, M. LerouxVolume:
204
Year:
2007
Language:
english
Pages:
8
DOI:
10.1002/pssa.200673585
File:
PDF, 517 KB
english, 2007