High-quality SiO2/GaN interface for enhanced operation...

physica status solidi (a) 2007 Vol. 204; Iss. 6

High-quality SiO2/GaN interface for enhanced operation field-effect transistor

Yuki Niiyama, Tatsuyuki Shinagawa, Shinya Ootomo, Hiroshi Kambayashi, Takehiko Nomura, Seikoh Yoshida
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Volume:
204
Year:
2007
Language:
english
Pages:
5
DOI:
10.1002/pssa.200674844
File:
PDF, 151 KB
english, 2007
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