First-principles simulations of the leakage current in metal–oxide–semiconductor structures caused by oxygen vacancies in HfO2 high-K gate dielectric
L. F. Mao, Z. O. WangVolume:
205
Year:
2008
Language:
english
Pages:
5
DOI:
10.1002/pssa.200723166
File:
PDF, 198 KB
english, 2008