Defect formation in GaN grown on vicinal 4H-SiC (0001)...

physica status solidi (a) 2007 Vol. 204; Iss. 12

Defect formation in GaN grown on vicinal 4H-SiC (0001) substrates

M. Rudziński, E. Jezierska, J. L. Weyher, L. Macht, P. R. Hageman, J. Borysiuk, T. C. Rödle, H. F. F. Jos, P. K. Larsen
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Volume:
204
Year:
2007
Language:
english
Pages:
11
DOI:
10.1002/pssa.200723324
File:
PDF, 1.66 MB
english, 2007
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