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Very low dislocation density, resistive GaN films obtained using transition metal nitride interlayers
M. A. Moram, M. J. Kappers, Y. Zhang, Z. H. Barber, C. J. HumphreysVolume:
205
Year:
2008
Language:
english
Pages:
3
DOI:
10.1002/pssa.200778608
File:
PDF, 223 KB
english, 2008