Very low dislocation density, resistive GaN films obtained...

Very low dislocation density, resistive GaN films obtained using transition metal nitride interlayers

M. A. Moram, M. J. Kappers, Y. Zhang, Z. H. Barber, C. J. Humphreys
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
205
Year:
2008
Language:
english
Pages:
3
DOI:
10.1002/pssa.200778608
File:
PDF, 223 KB
english, 2008
Conversion to is in progress
Conversion to is failed