Strain relaxation in AlN/GaN heterostructures grown by...

physica status solidi (a) 2008 Vol. 205; Iss. 11

Strain relaxation in AlN/GaN heterostructures grown by molecular beam epitaxy

G. P. Dimitrakopulos, Ph. Komninou, Th. Kehagias, S.-L. Sahonta, J. Kioseoglou, N. Vouroutzis, I. Hausler, W. Neumann, E. Iliopoulos, A. Georgakilas, Th. Karakostas
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Volume:
205
Year:
2008
Language:
english
Pages:
4
DOI:
10.1002/pssa.200780137
File:
PDF, 384 KB
english, 2008
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