InAlN-barrier HFETs with GaN and InGaN channels

physica status solidi (a) 2009 Vol. 206; Iss. 7

InAlN-barrier HFETs with GaN and InGaN channels

J. Liberis, I. Matulionienė, A. Matulionis, E. Šermukšnis, J. Xie, J. H. Leach, H. Morkoç
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Volume:
206
Year:
2009
Language:
english
Pages:
11
DOI:
10.1002/pssa.200824287
File:
PDF, 951 KB
english, 2009
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