High electron mobility achieved in n-channel 4H-SiC MOSFETs...

physica status solidi (a) 2009 Vol. 206; Iss. 10

High electron mobility achieved in n-channel 4H-SiC MOSFETs oxidized in the presence of nitrogen

B. Zippelius, S. Beljakowa, M. Krieger, G. Pensl, S. A. Reshanov, M. Noborio, T. Kimoto, V. V. Afanas'ev
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
206
Year:
2009
Language:
english
Pages:
11
DOI:
10.1002/pssa.200925089
File:
PDF, 1.70 MB
english, 2009
Conversion to is in progress
Conversion to is failed