Reliability issues of SiC power MOSFETs toward high...

Reliability issues of SiC power MOSFETs toward high junction temperature operation

Satoshi Tanimoto, Hiromichi Ohashi
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Volume:
206
Year:
2009
Language:
english
Pages:
14
DOI:
10.1002/pssa.200925167
File:
PDF, 1.86 MB
english, 2009
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