Microstructure of N-face InN grown on Si (111) by...

physica status solidi (a) 2010 Vol. 207; Iss. 5

Microstructure of N-face InN grown on Si (111) by plasma-assisted MBE using a thin GaN–AlN buffer layer

G. P. Dimitrakopulos, Th. Kehagias, A. Ajagunna, J. Kioseoglou, I. Kerasiotis, G. Nouet, A. P. Vajpeyi, Ph. Komninou, Th. Karakostas
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Volume:
207
Year:
2010
Language:
english
Pages:
5
DOI:
10.1002/pssa.200983103
File:
PDF, 650 KB
english, 2010
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