Irradiation-induced defects in InN and GaN studied with...

Irradiation-induced defects in InN and GaN studied with positron annihilation

Floris Reurings, Filip Tuomisto, Werner Egger, Benjamin Löwe, Luca Ravelli, Stanislav Sojak, Zuzanna Liliental-Weber, Rebecca E. Jones, Kin M. Yu, Wladek Walukiewicz, William J. Schaff
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Volume:
207
Year:
2010
Language:
english
Pages:
4
DOI:
10.1002/pssa.200983111
File:
PDF, 771 KB
english, 2010
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