Influence of the doping concentration on crystallographic...

physica status solidi (a) 2011 Vol. 208; Iss. 6

Influence of the doping concentration on crystallographic pore growth on n-type InP and GaAs

Malte Leisner, Daniel Dorow-Gerspach, Jürgen Carstensen, Helmut Föll
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Volume:
208
Year:
2011
Language:
english
Pages:
5
DOI:
10.1002/pssa.201000032
File:
PDF, 505 KB
english, 2011
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