Low leakage current in AlGaN/GaN HFETs with preflow of Mg...

physica status solidi (a) 2011 Vol. 208; Iss. 7

Low leakage current in AlGaN/GaN HFETs with preflow of Mg source before growth of u-GaN buffer layer

Yoshinori Oshimura, Takayuki Sugiyama, Kenichiro Takeda, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, Hiroshi Amano
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Volume:
208
Year:
2011
Language:
english
Pages:
4
DOI:
10.1002/pssa.201001020
File:
PDF, 343 KB
english, 2011
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