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HfO2-insulated gate N-polar GaN HEMTs with high breakdown voltage
D. J. Meyer, D. S. Katzer, D. A. Deen, D. F. Storm, S. C. Binari, T. GougousiVolume:
208
Year:
2011
Language:
english
Pages:
4
DOI:
10.1002/pssa.201001080
File:
PDF, 273 KB
english, 2011