AlGaN/GaInN/GaN heterostructure field-effect transistor

physica status solidi (a) 2011 Vol. 208; Iss. 7

AlGaN/GaInN/GaN heterostructure field-effect transistor

Hiromichi Ikki, Yasuhiro Isobe, Daisuke Iida, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, Hiroshi Amano, Akira Bandoh, Takashi Udagawa
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Volume:
208
Year:
2011
Language:
english
Pages:
3
DOI:
10.1002/pssa.201001153
File:
PDF, 428 KB
english, 2011
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