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Structural properties of semipolar AlxGa1−xN() films grown on ZnO substrates using room temperature epitaxial buffer layers
Kohei Ueno, Atsushi Kobayashi, Jitsuo Ohta, Hiroshi FujiokaVolume:
207
Year:
2010
Language:
english
Pages:
4
DOI:
10.1002/pssa.201026209
File:
PDF, 251 KB
english, 2010