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Improvement of breakdown characteristics in AlGaN/GaN/AlxGa1−xN HEMT based on a grading AlxGa1−xN buffer layer
Hongbo Yu, Sefer B. Lisesivdin, Basar Bolukbas, Ozgur Kelekci, Mustafa Kemal Ozturk, Suleyman Ozcelik, Deniz Caliskan, Mustafa Ozturk, Huseyin Cakmak, Pakize Demirel, Ekmel OzbayVolume:
207
Year:
2010
Language:
english
Pages:
4
DOI:
10.1002/pssa.201026270
File:
PDF, 381 KB
english, 2010