High-efficiency InGaN/GaN quantum well structures on large area silicon substrates
D. Zhu, C. McAleese, M. Häberlen, M. J. Kappers, N. Hylton, P. Dawson, G. Radtke, M. Couillard, G. A. Botton, S.-L. Sahonta, C. J. HumphreysVolume:
209
Year:
2012
Language:
english
Pages:
4
DOI:
10.1002/pssa.201100129
File:
PDF, 398 KB
english, 2012