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Investigation of a relaxation mechanism specific to InGaN for improved MOVPE growth of nitride solar cell materials
K. Pantzas, G. Patriarche, G. Orsal, S. Gautier, T. Moudakir, M. Abid, V. Gorge, Z. Djebbour, P. L. Voss, A. OugazzadenVolume:
209
Year:
2012
Language:
english
Pages:
4
DOI:
10.1002/pssa.201100154
File:
PDF, 396 KB
english, 2012