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Enhancement of two-dimensional electron gases in AlGaN-channel high-electron-mobility transistors with AlN barrier layers
Shin Hashimoto, Katsushi Akita, Yoshiyuki Yamamoto, Masaki Ueno, Takao Nakamura, Kenichiro Takeda, Motoaki Iwaya, Yoshio Honda, Hiroshi AmanoVolume:
209
Year:
2012
Language:
english
Pages:
4
DOI:
10.1002/pssa.201100379
File:
PDF, 328 KB
english, 2012