Characterization of single-event multiple cell upsets in a...

Science China Technological Sciences 2015 / 10 Vol. 58; Iss. 10

Characterization of single-event multiple cell upsets in a custom SRAM in a 65 nm triple-well CMOS technology

Chen, HaiYan, Chen, JianJun, Yao, Long
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Volume:
58
Language:
english
Journal:
Science China Technological Sciences
DOI:
10.1007/s11431-015-5906-0
Date:
October, 2015
File:
PDF, 901 KB
english, 2015
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