p–n junctions in the surface region of silicon obtained by...

p–n junctions in the surface region of silicon obtained by evaporation of silicon in ultrahigh vacuum

L. N. Aleksandrov, R. N. Lovyagin, P. A. Simonov, I. S. Bzinkovskaya
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Volume:
45
Year:
1978
Language:
english
Pages:
7
DOI:
10.1002/pssa.2210450220
File:
PDF, 533 KB
english, 1978
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