Study of Imperfections in Ge–Te Semiconductors by the...

Study of Imperfections in Ge–Te Semiconductors by the Positron Annihilation Technique

B. V. Kobrin, R. M. Kupriyanova, V. S. Minaev, E. P. Prokopiev, V. P. Shantarovich
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Volume:
73
Year:
1982
Language:
english
Pages:
4
DOI:
10.1002/pssa.2210730204
File:
PDF, 276 KB
english, 1982
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