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Nonstoichiometric germanium nitride. A new insulating material for MIS microelectronics. II. Composition, properties, and the interface with a semiconductor
G. D. Bagratishvili, R. B. Dzhanelidze, D. A. JishiashviliVolume:
78
Year:
1983
Language:
english
Pages:
10
DOI:
10.1002/pssa.2210780204
File:
PDF, 587 KB
english, 1983