Efficiency of radiation defect formation in silicon at...

Efficiency of radiation defect formation in silicon at various intensities of electron and γ-ray irradiation

P. F. Lugakov, V. V. Lukyanitsa
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Volume:
83
Year:
1984
Language:
english
Pages:
8
DOI:
10.1002/pssa.2210830213
File:
PDF, 560 KB
english, 1984
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