The effect of annealing and hydrogenation on the dislocation conduction in silicon
V. V. Kveder, Yu. A. Osipyan, I. R. Sagdeev, A. I. Shalynin, M. N. ZolotukhinVolume:
87
Year:
1985
Language:
english
Pages:
9
DOI:
10.1002/pssa.2210870230
File:
PDF, 572 KB
english, 1985