A 0.18-/spl mu/m 3.0-V 64-Mb nonvolatile phase-transition...

IEEE Journal of Solid-State Circuits 2005 / 01 Vol. 40; Iss. 1

A 0.18-/spl mu/m 3.0-V 64-Mb nonvolatile phase-transition random access memory (PRAM)

Woo Yeong Cho,, Beak-Hyung Cho,, Byung-Gil Choi,, Hyung-Rok Oh,, Sangbeom Kang,, Ki-Sung Kim,, Kyung-Hee Kim,, Du-Eung Kim,, Choong-Keun Kwak,, Hyun-Geun Byun,, Youngnam Hwang,, Ahn, S., Gw
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Volume:
40
Language:
english
Journal:
IEEE Journal of Solid-State Circuits
DOI:
10.1109/jssc.2004.837974
Date:
January, 2005
File:
PDF, 1.38 MB
english, 2005
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