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Ellipsometric and ion backscattering measurements of the properties of silicon-on-insulator structure formed by thermally activated redistribution of high-dose ion implanted nitrogen
N. Q. Khanh, M. Fried, G. Battistig, Z. Laczik, T. Lohner, E. Jaroli, V. Schiller, J. GuylaiVolume:
108
Year:
1988
Language:
english
Pages:
1
DOI:
10.1002/pssa.2211080159
File:
PDF, 294 KB
english, 1988