Etude structurale, par diffraction de R-X, des liaisons...

Etude structurale, par diffraction de R-X, des liaisons dans les semiconducteurs ternaires ZnSiAs2, ZnGeAs2 et ZnSnAs2

M. Levalois, G. Allais
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Volume:
109
Year:
1988
Pages:
8
DOI:
10.1002/pssa.2211090110
File:
PDF, 565 KB
1988
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