Contact resistance reduction by implanted n+-layers at the...

Contact resistance reduction by implanted n+-layers at the Ni/AuGe-GaAs system

B. Sandow, E. Nebauer, H. Strusny
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Volume:
109
Year:
1988
Language:
english
Pages:
1
DOI:
10.1002/pssa.2211090149
File:
PDF, 138 KB
english, 1988
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