Degradation and Breakdown of Gate Oxides in VLSI Devices

physica status solidi (a) 1989 Vol. 111; Iss. 2

Degradation and Breakdown of Gate Oxides in VLSI Devices

J. Suñé, I. Placencia, N. Barniol, E. Farrés, X. Aymerich
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Volume:
111
Year:
1989
Language:
english
Pages:
11
DOI:
10.1002/pssa.2211110235
File:
PDF, 744 KB
english, 1989
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