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Effect of Radiation Defects and Elastic Incompatibility Stresses on the Electrical Activation and Diffusion of Boron in Ion-Implanted Silicon
V. F. Stelmakh, Yu. R. Sutrtin-belevich, A. R. ChelyadinskiiVolume:
112
Year:
1989
Language:
english
Pages:
4
DOI:
10.1002/pssa.2211120150
File:
PDF, 236 KB
english, 1989