Modeling of Nitrogen High Dose Implantation into Silicon in...

Modeling of Nitrogen High Dose Implantation into Silicon in the Energy Range of 150 to 330 keV

E. Sobeslavsky, W. Skorupa
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Volume:
114
Year:
1989
Language:
english
Pages:
10
DOI:
10.1002/pssa.2211140110
File:
PDF, 591 KB
english, 1989
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