The Peculiarities of Deep Level Defect Passivation in Si by Atomic Hydrogen
S. V. Koveshnikov, S. V. Nosenko, E. B. YakimovVolume:
120
Year:
1990
Language:
english
Pages:
5
DOI:
10.1002/pssa.2211200211
File:
PDF, 297 KB
english, 1990