The Peculiarities of Deep Level Defect Passivation in Si by...

The Peculiarities of Deep Level Defect Passivation in Si by Atomic Hydrogen

S. V. Koveshnikov, S. V. Nosenko, E. B. Yakimov
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Volume:
120
Year:
1990
Language:
english
Pages:
5
DOI:
10.1002/pssa.2211200211
File:
PDF, 297 KB
english, 1990
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