Trap Tunneling in HgCdTe n+ −p Junctions Fabricated by Ion...

Trap Tunneling in HgCdTe n+ −p Junctions Fabricated by Ion Implantation

H. Heukenkamp, W. Hoerstel
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Volume:
120
Year:
1990
Language:
english
Pages:
12
DOI:
10.1002/pssa.2211200221
File:
PDF, 618 KB
english, 1990
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