Ion-beam-induced epitaxial crystallization of Si due to diffusion of point defects from crystalline and amorphous regions to the interphase boundary
N. P. Stepina, G. A. Kachurin, V. P. Popov, S. I. RomanovVolume:
141
Year:
1994
Language:
english
Pages:
6
DOI:
10.1002/pssa.2211410207
File:
PDF, 427 KB
english, 1994