The effect of impurity concentration dependent static...

The effect of impurity concentration dependent static dielectric constant on band-gap narrowing in heavily doped silicon

S. D. Ristić, Z. D. Prijić, S. Ž. Mijalković
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Volume:
148
Year:
1995
Language:
english
Pages:
10
DOI:
10.1002/pssa.2211480226
File:
PDF, 443 KB
english, 1995
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