The effect of impurity concentration dependent static dielectric constant on band-gap narrowing in heavily doped silicon
S. D. Ristić, Z. D. Prijić, S. Ž. MijalkovićVolume:
148
Year:
1995
Language:
english
Pages:
10
DOI:
10.1002/pssa.2211480226
File:
PDF, 443 KB
english, 1995