Wet chemical MESA etching of InGaP and GaAs with solutions...

physica status solidi (a) 1995 Vol. 151; Iss. 1

Wet chemical MESA etching of InGaP and GaAs with solutions based on HCl, CH3COOH, and H2O2

D. Gregušová, P. Eliáš, L. Malacký, R. Kúdela, J. Škriniarová
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Volume:
151
Year:
1995
Language:
english
Pages:
6
DOI:
10.1002/pssa.2211510113
File:
PDF, 401 KB
english, 1995
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