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Unintentionally doped high resistivity GaN layers with an InGaN interlayer grown by MOCVD
Liu, Jianxun, Liang, Hongwei, Li, Bing-Hui, Liu, Yang, Xia, Xiaochuan, Huang, Huolin, Sandhu, Qasim Abbas, Shen, Rensheng, Luo, Yingmin, Du, GuotongYear:
2016
Language:
english
Journal:
RSC Adv.
DOI:
10.1039/C6RA10696J
File:
PDF, 1.58 MB
english, 2016