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Analytical Modeling of Threshold Voltage of Short-Channel Strained-Si on Silicon–Germanium-On-Insulator (SGOI) Metal–Oxide–Semiconductor Field-Effect Transistors with Localized Charges
Kumar, Mirgender, Dubey, Sarvesh, Kumar Tiwari, Pramod, Jit, S.Volume:
11
Language:
english
Journal:
Journal of Computational and Theoretical Nanoscience
DOI:
10.1166/jctn.2014.3332
Date:
January, 2014
File:
PDF, 1.34 MB
english, 2014