Failure Analysis of InGaN/GaN High Power Light-Emitting Diodes Fabricated with ITO Transparent p-Type Electrode During Accelerated Electro-Thermal Stress
Moon, Seong Min, Kim, Y. D., Oh, S. K., Park, M. J., Kwak, Joon SeopVolume:
12
Language:
english
Journal:
Journal of Nanoscience and Nanotechnology
DOI:
10.1166/jnn.2012.5938
Date:
May, 2012
File:
PDF, 3.47 MB
english, 2012