Polarity dependent properties of GaN layers grown by...

physica status solidi (b) 2003 Vol. 240; Iss. 2

Polarity dependent properties of GaN layers grown by hydride vapor phase epitaxy on GaN bulk crystals

F. Tuomisto, T. Suski, H. Teisseyre, M. Krysko, M. Leszczynski, B. Lucznik, I. Grzegory, S. Porowski, D. Wasik, A. Witowski, W. Gebicki, P. Hageman, K. Saarinen
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Volume:
240
Year:
2003
Language:
english
Pages:
4
DOI:
10.1002/pssb.200303259
File:
PDF, 102 KB
english, 2003
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