Characterization of MOVPE-grown GaN layers on GaAs (111)B...

physica status solidi (b) 2003 Vol. 240; Iss. 2

Characterization of MOVPE-grown GaN layers on GaAs (111)B with a cubic-GaN (111) epitaxial intermediate layer

S. Sanorpim, E. Takuma, R. Katayama, H. Ichinose, K. Onabe, Y. Shiraki
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Volume:
240
Year:
2003
Language:
english
Pages:
5
DOI:
10.1002/pssb.200303463
File:
PDF, 199 KB
english, 2003
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