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Quantitative evaluation of the atomic structure of defects and composition fluctuations at the nanometer scale inside InGaN/GaN heterostructures
P. Ruterana, P. Singh, S. Kret, G. Jurczak, G. Maciejewski, P. Dluzewski, H. K. Cho, R. J. Choi, H. J. Lee, E. K. SuhVolume:
241
Year:
2004
Language:
english
Pages:
4
DOI:
10.1002/pssb.200405084
File:
PDF, 452 KB
english, 2004