Particularities of the formation of radiation defects in...

physica status solidi (b) 2006 Vol. 243; Iss. 8

Particularities of the formation of radiation defects in silicon with low and high concentrations of oxygen

A. P. Dolgolenko, P. G. Litovchenko, M. D. Varentsov, G. P. Gaidar, A. P. Litovchenko
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Volume:
243
Year:
2006
Language:
english
Pages:
11
DOI:
10.1002/pssb.200541074
File:
PDF, 377 KB
english, 2006
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