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Intersubband absorption at 1.5–3.5 μm in GaN/AlN multiple quantum wells grown by molecular beam epitaxy on sapphire
X. Y. Liu, P. Holmström, P. Jänes, L. Thylén, T. G. AnderssonVolume:
244
Year:
2007
Language:
english
Pages:
14
DOI:
10.1002/pssb.200675606
File:
PDF, 525 KB
english, 2007