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[IEEE 2015 IEEE International Electron Devices Meeting (IEDM) - Washington, DC, USA (2015.12.7-2015.12.9)] 2015 IEEE International Electron Devices Meeting (IEDM) - 26.5 Terahertz electrically triggered RF switch on epitaxial VO2-on-Sapphire (VOS) wafer
Madan, H., Zhang, H-T., Jerry, M., Mukherjee, D., Alem, N., Engel-Herbert, R., Datta, S.Year:
2015
Language:
english
DOI:
10.1109/iedm.2015.7409661
File:
PDF, 838 KB
english, 2015