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Explicit Continuous Current–Voltage (I–V) Models for Fully-Depleted Surrounding-Gate MOSFETs (SGMOSFETs) with a Finite Doping Body
Yu, Yun Seop, Cho, Namki, Oh, Jung Hyun, Hwang, Sung Woo, Ahn, DoyeolVolume:
10
Language:
english
Journal:
Journal of Nanoscience and Nanotechnology
DOI:
10.1166/jnn.2010.2271
Date:
May, 2010
File:
PDF, 330 KB
english, 2010