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Fabrication of high performance 3C-SiC vertical MOSFETs by reducing planar defects
Hiroyuki Nagasawa, Masayuki Abe, Kuniaki Yagi, Takamitsu Kawahara, Naoki HattaVolume:
245
Year:
2008
Language:
english
Pages:
9
DOI:
10.1002/pssb.200844053
File:
PDF, 1.49 MB
english, 2008