Novel Narrow Band-Gap InAsSbP-Based Quantum Dot...

Journal of Nanoscience and Nanotechnology 2013 / 02 Vol. 13; Iss. 2

Novel Narrow Band-Gap InAsSbP-Based Quantum Dot Mid-Infrared Photodetectors: Fabrication, Optoelectronic and Electrophysical Properties

Harutyunyan, Vardan, Gambaryan, Karen, Aroutiounian, Vladimir
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Volume:
13
Language:
english
Journal:
Journal of Nanoscience and Nanotechnology
DOI:
10.1166/jnn.2013.6066
Date:
February, 2013
File:
PDF, 4.65 MB
english, 2013
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